A Unified Model for Gate Capacitance–Voltage Characteristics and Extraction of Parameters of Si/SiGe Heterostructure pMOSFETs

Author

Bindu, B. ; DasGupta, Nandita ; DasGupta, Amitava

Author_Institution

Indian Inst. of Technol. Madras, Chennai

Volume

54

Issue

8

fYear

2007

Firstpage

1889

Lastpage

1896

Abstract

A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such as the valence band offset, Si cap layer thickness, threshold voltages, and substrate doping is also presented in this paper.

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor doping; semiconductor heterojunctions; silicon; valence bands; Si-SiGe - Interface; buried-channel heterostructure pMOSFET; dual-channel heterostructure pMOSFET; gate capacitance-voltage characteristic; substrate doping; surface-channel heterostructure pMOSFET; valence band offset; Analytical models; Capacitance; Capacitance-voltage characteristics; Dielectric substrates; Doping; Germanium silicon alloys; MOSFET circuits; Semiconductor process modeling; Silicon germanium; Threshold voltage; Gate capacitance; MOSFET model; quantum–mechanical effects; silicon germanium; strained-silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.900013

Filename

4277949