Title :
A Unified Model for Gate Capacitance–Voltage Characteristics and Extraction of Parameters of Si/SiGe Heterostructure pMOSFETs
Author :
Bindu, B. ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
Indian Inst. of Technol. Madras, Chennai
Abstract :
A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such as the valence band offset, Si cap layer thickness, threshold voltages, and substrate doping is also presented in this paper.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor doping; semiconductor heterojunctions; silicon; valence bands; Si-SiGe - Interface; buried-channel heterostructure pMOSFET; dual-channel heterostructure pMOSFET; gate capacitance-voltage characteristic; substrate doping; surface-channel heterostructure pMOSFET; valence band offset; Analytical models; Capacitance; Capacitance-voltage characteristics; Dielectric substrates; Doping; Germanium silicon alloys; MOSFET circuits; Semiconductor process modeling; Silicon germanium; Threshold voltage; Gate capacitance; MOSFET model; quantum–mechanical effects; silicon germanium; strained-silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.900013
