DocumentCode :
1072484
Title :
Ballistic and near ballistic transport in GaAs
Author :
Shur, M.S. ; Eastman, L.F.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
1
Issue :
8
fYear :
1980
fDate :
8/1/1980 12:00:00 AM
Firstpage :
147
Lastpage :
148
Abstract :
Calculations which take into account collisions and intervally transfer in GaAs indicate that the electron transport in short GaAs structures is near-ballistic. High drift velocities (in excess of 5-107cm/s) may be achieved leading to potentially superior device performance.
Keywords :
Ballistic transport; Effective mass; Electron devices; Gallium arsenide; Monte Carlo methods; Poisson equations; Scattering; Solids; Steady-state; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25267
Filename :
1481129
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1072484
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