• DocumentCode
    1072492
  • Title

    Two and three terminal gallium arsenide FET optical detectors

  • Author

    Edwards, W.D.

  • Author_Institution
    Communications Research Centre, Ontario, Canada
  • Volume
    1
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    The changes in source-drain current and substrate voltage as a function of illumination intensity have been measured for two and three terminal GaAs FET structures. At low frequency, comparably high gains were observed in devices with and without gate metallization. The photo-response is probably due to a channel width modulation by a positive photovoltage developed between the high resistivity substrate and the n-epi channel.
  • Keywords
    Conductivity; FETs; Gallium arsenide; High speed optical techniques; Intrusion detection; Lighting; Optical detectors; Optical devices; Stimulated emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25268
  • Filename
    1481130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072492