Title :
Resistance associated with FET gate metallization
Author_Institution :
National Radio Astronomy Observatory, Charlottesville, VA
fDate :
8/1/1980 12:00:00 AM
Abstract :
The resistance of the metallization of a FET gate stripe has the effect of placing a non-linear resistance R(I) in series with the gate junction. A simple means of calculating R(I) is developed, and a curve of the drop across R(1) at milliampere forward biases is given.
Keywords :
Convergence; Current measurement; Diodes; Electrical resistance measurement; Equations; FETs; Iterative algorithms; Metallization; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25269
