Title :
Double heterostructure Ga0.47In0.53As MESFETs by MBE
Author :
Ohno, Hideo ; Barnard, Joseph ; Wood, Colin E.C. ; Eastman, Lester F.
Author_Institution :
Cornell University, Ithaca, New York
fDate :
8/1/1980 12:00:00 AM
Abstract :
Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been overcome by using thin Al0.48In0.52As layers between gate metal and GaInAs active layers. Al0.48In0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm= 57 mS mm-1in spite of nonoptimized dimensions.
Keywords :
Buffer layers; Electrons; Fabrication; Gallium arsenide; Indium phosphide; Lattices; MESFETs; Molecular beam epitaxial growth; Schottky barriers; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25270
