• DocumentCode
    1072572
  • Title

    Comments on "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"

  • Author

    Gildenblat, G. ; Klaassen, D.B.M. ; McAndrew, C.C.

  • Author_Institution
    Arizona State Univ, Tempe
  • Volume
    54
  • Issue
    8
  • fYear
    2007
  • Firstpage
    2061
  • Lastpage
    2062
  • Abstract
    This paper points out inaccuracies and improper attribution to previous publications in the above paper by J. He (see ibid., vol.53, no.9, p.2008-16, Sep 2006).
  • Keywords
    MOSFET; semiconductor device models; MOSFET surface potential; accumulation region; physics-based analytic solution; strong-inversion region; Approximation methods; Electric potential; Equations; Integrated circuit modeling; MOSFET circuits; Mathematical model;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.900842
  • Filename
    4277958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072572