Title : 
A Broadband and Scalable Lumped Element Model for Fully Symmetric Inductors Under Single-Ended and Differentially Driven Operations
         
        
            Author : 
Guo, Jyh-Chyurn ; Tan, Teng-Yang
         
        
            Author_Institution : 
Nat. Chiao-Tung Univ., Hsinchu
         
        
        
        
        
        
        
            Abstract : 
A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D full- wave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Zln(omega)), and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Qmax by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond fm (Qmax).
         
        
            Keywords : 
equivalent circuits; inductors; lumped parameter networks; 2-T model; 3D full- wave electromagnetic simulation; T-model circuits; broadband lumped element model; equivalent circuit; fully symmetric inductors; scalable lumped element model; spiral coil radii; two-step deembedding; Circuit simulation; Circuit topology; Electromagnetic scattering; Equivalent circuits; Frequency; Inductors; Parameter extraction; Scalability; Scattering parameters; Spirals; Broadband; differential; inductor; scalable; single end; symmetric;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TED.2007.900005