Title :
Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes
Author :
Hoang, Tu ; Holleman, Jisk ; LeMinh, Phuong ; Schmitz, Jurriaan ; Mchedlidze, Teimuraz ; Arguirov, Tzanimir ; Kittler, Martin
Author_Institution :
Twente Univ, Enschede
Abstract :
The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.
Keywords :
dislocation loops; electroluminescence; elemental semiconductors; light emitting diodes; photoluminescence; silicon; Dl line; diode junction; dislocation loops; electroluminescence; infrared light sources; near-infrared light emission; photoluminescence; silicon diodes; Annealing; Integrated optics; Ion implantation; Light emitting diodes; Light sources; Nanotechnology; Radiative recombination; Semiconductor devices; Semiconductor diodes; Silicon; Dislocation loops; integrated optics; integrated optoelectronics; light sources; light-emitting diodes (LEDs); luminescent devices; optoelectronic devices; semiconductor device fabrication; semiconductor devices; silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.901072
