Title :
Amorphous-silicon image sensor IC
Author :
Matsumura, M. ; Hayama, H. ; Nara, Y. ; Ishibashi, K.
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
fDate :
9/1/1980 12:00:00 AM
Abstract :
A novel amorphous-silicon image sensor IC is proposed in this letter. The unit cell consists of an amorphous-silicon field effect transistor, an amorphous-silicon photoconductor and an MOS capacitor. The fundamental properties of the cell are investigated and operation of a prototype integrated 8-bits linear array is described.
Keywords :
Clocks; FET integrated circuits; Image sensors; Lighting; MOS capacitors; Optical arrays; Optical films; Photoconductivity; Prototypes; Space vector pulse width modulation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25280
