Magneto-Logic Device Based on a Single-Layer Magnetic Tunnel Junction

Author

Lee, Seungyeon ; Choa, Sunghoon ; Lee, Seungjun ; Shin, Hyungsoon

Author_Institution

Ewha W. Univ, Seoul

Volume

54

Issue

8

fYear

2007

Firstpage

2040

Lastpage

2044

Abstract

A magnetic tunnel junction (MTJ) element can compute Boolean functions and also store the output of its last operation. Therefore, the MTJ shows potential for a universal logic element to implement sequential-logic functions as well as combinatorial ones. The established magneto-logic element has been designed and fabricated based on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single-layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity.

Keywords

Boolean functions; logic devices; magnetic logic; magnetic tunnelling; magnetoresistive devices; Boolean functions; magneto-logic device; magnetoresis-tive devices; nonvolatile logic devices; sequential-logic functions; single-layer magnetic tunnel junction; Boolean functions; CMOS logic circuits; Information technology; Logic devices; Magnetic circuits; Magnetic devices; Magnetic tunneling; Magnetoresistive devices; Nonvolatile memory; Reconfigurable logic; Magnetic tunnel junction (MTJ); magnetoresistive devices; nonvolatile logic devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.900683

Filename

4277966