Title :
GaN resonant cavity light-emitting diodes for plastic optical fiber applications
Author :
Shaw, A.J. ; Bradley, A.L. ; Donegan, J.F. ; Lunney, J.G.
Author_Institution :
Phys. Dept., Trinity Coll., Dublin, Ireland
Abstract :
The optical designs of resonant GaN light-emitting diodes (LEDs) have been determined for maximum extraction efficiency into typical plastic optical fiber of numerical aperture 0.5. An optimum extraction efficiency of 3.9% can be achieved for a practical resonant cavity LED (RCLED), taking account of current growth and processing considerations. The optimized device is a metal-active layer distributed Bragg reflector construction. Constructive interference effects from the top metal mirror are found to play the dominant role in efficiency enhancement. The extraction efficiency of an optimized resonant single-mirror LED is found to be 3.3%, indicating a small compromise in performance compared with the more complex RCLED structure.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium compounds; integrated optics; laser cavity resonators; light emitting diodes; optical design techniques; optical fibres; optical polymers; 3.3 percent; 3.9 percent; GaN; GaN resonant cavity LED; constructive interference effects; distributed Bragg reflector; light emitting diodes; metal mirror; metal-active layer; optical designs; plastic optical fiber; resonant cavity enhancement; resonant single-mirror LED; Apertures; Distributed Bragg reflectors; Gallium nitride; Interference; Light emitting diodes; Optical design; Optical fiber applications; Optical fibers; Plastics; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.833116
