DocumentCode
1072675
Title
Lateral MIS tunnel transistor
Author
Ruzyllo, Jerzy
Author_Institution
Pennsylvania State University, University Park, PA
Volume
1
Issue
10
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
197
Lastpage
199
Abstract
A new device structure called the Lateral MIS Tunnel Transistor (LMISTT) is proposed, and its basic features and characteristics are presented. In this device, effects related to the lateral conduction in MIS tunnel structures are implemented. The device is featured by very simple processing, and shows promise in a variety of applications, including very large scale integration high speed IC´s.
Keywords
Bipolar transistors; Doping; Electrodes; Electrons; Fabrication; Polarization; Silicon; Testing; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25287
Filename
1481149
Link To Document