Title :
Evidence of space-charge-limited current in amorphous silicon Schottky diodes
Author :
Ashok, S. ; Lester, A. ; Fonash, S.J.
Author_Institution :
Pennsylvania State University, University Park, PA
fDate :
10/1/1980 12:00:00 AM
Abstract :
Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.
Keywords :
Amorphous materials; Amorphous silicon; Conductivity; Electron traps; Hydrogen; Photovoltaic cells; Schottky barriers; Schottky diodes; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25288
