Title :
Synthesis of Fe16N2 films by using reactive plasma
Author :
Takahashi, Migaku ; Shoji, Hiroki ; Takahashi, Hideyuki ; Wakiyama, Tokuo ; Kinoshita, Mikio ; Ohta, Wasaburo
Author_Institution :
Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
fDate :
11/1/1993 12:00:00 AM
Abstract :
The synthesis of α"-Fe16N2 films using reactive plasma is examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (Te=0.2~0.6 eV, Ne≃109 cm-3 ) α"-Fe16N2 films are synthesized on MgO single crystal substrates with film thicknesses ranging from 0.03 to 1 μm for sputtering and 0.2 μm for plasma evaporation. The deposition rate is 200 Å/min for sputtering and 100~420 Å/mn for plasma evaporation. σs for α"-Fe16N2 films fabricated by plasma evaporation shows 235 emu/g and for the sputtered films shows 218 emu/g. These values are very small compared to the earlier reported value, 2.9 T (310 emu/g). The effects of ordering of N atoms in BCT lattice and the volume effect of unit cell are discussed in connection with σs
Keywords :
X-ray diffraction examination of materials; ferromagnetic properties of substances; iron compounds; lattice constants; magnetic moments; magnetic thin films; plasma deposition; sputter deposition; BCT lattice; Fe16N2 film synthesis; MgO single crystal substrate; X-ray diffraction patterns; deposition rate; film thicknesses; lattice constant; plasma evaporation; reactive plasma; saturation magnetic moment; sputtering; volume effect; Diffraction; Fabrication; Iron; Magnetic films; Plasma density; Plasma diagnostics; Plasma temperature; Sputtering; Substrates; Tellurium;
Journal_Title :
Magnetics, IEEE Transactions on
