Title :
Low-Impedance VHF and UHF Capacitive Silicon Bulk Acoustic-Wave Resonators—Part II: Measurement and Characterization
Author :
Pourkamali, Siavash ; Ho, Gavin K. ; Ayazi, Farrokh
Author_Institution :
University of Denver, Denver
Abstract :
In this part of the paper, extensive measurement results on the resonance, frequency tuning, and temperature characteristics of the silicon bulk acoustic-wave resonators (SiBARs) that were described in Part I will be presented and justified. Bulk acoustic wave resonators, high-aspect- ratio polysilicon and single-crystal silicon (HARPSS), MEMS, micromachining, micromechanical resonators, silicon resonators.
Keywords :
UHF devices; VHF devices; acoustic resonators; bulk acoustic wave devices; micromachining; micromechanical devices; MEMS; UHF capacitive silicon; bulk acoustic-wave resonators; frequency tuning; low-impedance VHF; micromachining; micromechanical resonators; ratio polysilicon; single-crystal silicon; Acoustic measurements; Acoustic waves; Frequency measurement; Micromechanical devices; Resonance; Resonant frequency; Silicon; Temperature; Tuning; UHF measurements; Bulk acoustic wave resonators; MEMS; high-aspect-ratio polysilicon and single-crystal silicon (HARPSS); micromachining; micromechanical resonators; silicon resonators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.901405
