DocumentCode :
1072771
Title :
Continuous operation of visible-spectrum in1-x Gax P1-z Asz laser diodes (6280 Å, 77 K)
Author :
Chin, R. ; Shichijo, H. ; Holonyak, N., Jr. ; Rossi, J.A. ; Keune, D.L. ; Finn, D.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume :
14
Issue :
10
fYear :
1978
fDate :
10/1/1978 12:00:00 AM
Firstpage :
711
Lastpage :
713
Abstract :
Stripe-geometry In1-x Gax P1-z Asz ( 
) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs1-y Py substrates, are described that operate (CW, 77 K) in the visible at 
Å with differential quantum efficiency 
percent and power output in the range 1-7 mW.
) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs Å with differential quantum efficiency percent and power output in the range 1-7 mW.Keywords :
DH-HEMTs; Diode lasers; Epitaxial growth; Heterojunctions; Laboratories; Laser transitions; Optical materials; Photonic band gap; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1978.1069676
Filename :
1069676
Link To Document :
