• DocumentCode
    1072771
  • Title

    Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)

  • Author

    Chin, R. ; Shichijo, H. ; Holonyak, N., Jr. ; Rossi, J.A. ; Keune, D.L. ; Finn, D.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Urbana, IL, USA
  • Volume
    14
  • Issue
    10
  • fYear
    1978
  • fDate
    10/1/1978 12:00:00 AM
  • Firstpage
    711
  • Lastpage
    713
  • Abstract
    Stripe-geometry In1-xGaxP1-zAsz( x \\approx 0.84-0.86, z \\approx 0.38-0.42 ) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs1-yPysubstrates, are described that operate (CW, 77 K) in the visible at \\lambda \\approx 6280-6360 Å with differential quantum efficiency \\eta_{ext} \\sim 28 percent and power output in the range 1-7 mW.
  • Keywords
    DH-HEMTs; Diode lasers; Epitaxial growth; Heterojunctions; Laboratories; Laser transitions; Optical materials; Photonic band gap; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1978.1069676
  • Filename
    1069676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072771