Title :
50-110 GHz Gunn diodes using molecular beam epitaxy
Author :
Haydl, William H. ; Smith, Robin S. ; Bosch, Roland
Author_Institution :
Institut für Angewandte Festkörperphysik der Fraunhofergesellschaft, Freiburg, West Germany
fDate :
10/1/1980 12:00:00 AM
Abstract :
Millimeterwave Gunn-oscillators have for the first time been fabricated using gallium arsenide grown by molecular beam epitaxy. Material produced by this new method of epitaxy has yielded c.w. integral heat sink oscillators with up to 20 mW of r.f. power at 90 GHz, 10 mW at 100 GHz, and 4 mW at 110 GHz. These results are comparable with those obtained from devices using gallium arsenide grown by other techniques such as vapor- or liquid-phase epitaxy.
Keywords :
Diodes; Doping; Epitaxial growth; Gallium arsenide; Gold; Gunn devices; Molecular beam epitaxial growth; Sputter etching; Substrates; Tin;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25296
