Title :
A surface-normal coupled-quantum-well modulator at 1.55 μm
Author :
Stievater, T.H. ; Rabinovich, W.S. ; Goetz, P.G. ; Mahon, R. ; Binari, S.C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; 1.55 mum; 6 V; InGaAs-InAlAs; InGaAs-InAlAs electroabsorption modulator; coupled-quantum-well modulator; optical modulation; strain-balanced layer structure; surface normal modulator; Chirp modulation; Heating; Indium gallium arsenide; Low voltage; Optical arrays; Optical coupling; Optical modulation; Optical surface waves; Quantum well devices; Stark effect;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.831981
