High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

Author

Sarua, Andrei ; Bullen, Alistair ; Haynes, Martin ; Kuball, Martin

Author_Institution

Bristol Univ., Bristol

Volume

54

Issue

8

fYear

2007

Firstpage

1838

Lastpage

1842

Abstract

Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.

Keywords

III-V semiconductors; Raman spectra; crosstalk; gallium arsenide; high electron mobility transistors; semiconductor device measurement; temperature measurement; thermal resistance; GaAs - Interface; crosstalk; device geometry; device periphery; high-resolution Raman temperature measurements; infrared thermography; laser excitation; microRaman spectroscopy; multifinger devices; p-HEMT; pseudomorphic-HEMT devices; self-heating; source-drain gap; thermal resistance; thermal stress; wavelength 488 nm; Gallium arsenide; Geometrical optics; Heating; Infrared spectra; Laser excitation; Spatial resolution; Spectroscopy; Temperature measurement; Thermal resistance; Thermal stresses; FETs; Raman spectroscopy; gallium compounds; pseudomorphic-HEMTs (p-HEMTs); temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.901349

Filename

4277979