Title :
P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices
Author :
Shen, Chen ; Pu, Jing ; Li, Ming-Fu ; Cho, Byung Jin
Author_Institution :
Nat. Univ. of Singapore
Abstract :
A flash memory with a lightly doped p-type floating gate is proposed, which improves charge retention and programming/erase (P/E) Vth window. Improvement in P/E window is enhanced for cells with smaller capacitance coupling ratio, which is important for future scaled flash memory cells. Both device simulation and experimental verification are presented.
Keywords :
field effect memory circuits; flash memories; capacitance coupling ratio; charge retention; flash memory devices; p-type floating gate; programming-erase window; Capacitance; Chromium; Electrons; Flash memory; Flash memory cells; Nonvolatile memory; PROM; Physics; Senior members; Space technology; Coupling ratio (CR); Flash memory; electrically erasable programmable read-only memory (EEPROM); floating gate; p-type; retention;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.900680
