• DocumentCode
    1072817
  • Title

    Nb/GaAs super-Schottky diode

  • Author

    Sugiyama, Y. ; Tacano, M. ; Sakai, S. ; Kataoka, S.

  • Author_Institution
    Electrotechnical Laboratory, Ibaraki, Japan
  • Volume
    1
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V-1and estimated NEP ≃ 1.2 × 10-15W/√HZ at 4.2 K under the optimum bias conditions.
  • Keywords
    Detectors; Gallium arsenide; Gold; Niobium; Schottky diodes; Semiconductor diodes; Superconducting films; Superconducting microwave devices; Superconducting transition temperature; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25301
  • Filename
    1481163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072817