DocumentCode :
1072817
Title :
Nb/GaAs super-Schottky diode
Author :
Sugiyama, Y. ; Tacano, M. ; Sakai, S. ; Kataoka, S.
Author_Institution :
Electrotechnical Laboratory, Ibaraki, Japan
Volume :
1
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
236
Lastpage :
238
Abstract :
A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V-1and estimated NEP ≃ 1.2 × 10-15W/√HZ at 4.2 K under the optimum bias conditions.
Keywords :
Detectors; Gallium arsenide; Gold; Niobium; Schottky diodes; Semiconductor diodes; Superconducting films; Superconducting microwave devices; Superconducting transition temperature; Zinc;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25301
Filename :
1481163
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1072817
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