• DocumentCode
    1072828
  • Title

    High efficiency polycrystalline silicon solar cells by continuous plasma deposition and laser recrystallization

  • Author

    Legge, R.N. ; Sarma, K.R.

  • Author_Institution
    Motorola Inc., Phoenix, Arizona
  • Volume
    1
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    239
  • Lastpage
    241
  • Abstract
    Solar cells of up to 12% efficiency have been fabricated on laser recrystallized fine grain polycrystalline silicon films produced by high pressure plasma (hpp) aided hydrogen reduction of trichlorosilane. The hpp system was operated in a continual mode to produce microcrystalline silicon films continually using finite size temporary molybdenum substrates. The major improvement over previous devices of this type is in the elimination of oxygen contamination during laser recrystallization. This resulted in a reduction in the dark excess junction current and improvement in minority carrier diffusion length. The devices are found to be diffusion limited, with diffusion current coefficients in the range of 3 × 10-12to 5 × 10-12A/cm2when the base resistivity was 0.4 to 0.5 Ω-cm p-type.
  • Keywords
    Grain size; Laser modes; Particle beams; Photovoltaic cells; Plasma applications; Plasma temperature; Raw materials; Semiconductor films; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25302
  • Filename
    1481164