DocumentCode :
1072828
Title :
High efficiency polycrystalline silicon solar cells by continuous plasma deposition and laser recrystallization
Author :
Legge, R.N. ; Sarma, K.R.
Author_Institution :
Motorola Inc., Phoenix, Arizona
Volume :
1
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
239
Lastpage :
241
Abstract :
Solar cells of up to 12% efficiency have been fabricated on laser recrystallized fine grain polycrystalline silicon films produced by high pressure plasma (hpp) aided hydrogen reduction of trichlorosilane. The hpp system was operated in a continual mode to produce microcrystalline silicon films continually using finite size temporary molybdenum substrates. The major improvement over previous devices of this type is in the elimination of oxygen contamination during laser recrystallization. This resulted in a reduction in the dark excess junction current and improvement in minority carrier diffusion length. The devices are found to be diffusion limited, with diffusion current coefficients in the range of 3 × 10-12to 5 × 10-12A/cm2when the base resistivity was 0.4 to 0.5 Ω-cm p-type.
Keywords :
Grain size; Laser modes; Particle beams; Photovoltaic cells; Plasma applications; Plasma temperature; Raw materials; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25302
Filename :
1481164
Link To Document :
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