DocumentCode
1072828
Title
High efficiency polycrystalline silicon solar cells by continuous plasma deposition and laser recrystallization
Author
Legge, R.N. ; Sarma, K.R.
Author_Institution
Motorola Inc., Phoenix, Arizona
Volume
1
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
239
Lastpage
241
Abstract
Solar cells of up to 12% efficiency have been fabricated on laser recrystallized fine grain polycrystalline silicon films produced by high pressure plasma (hpp) aided hydrogen reduction of trichlorosilane. The hpp system was operated in a continual mode to produce microcrystalline silicon films continually using finite size temporary molybdenum substrates. The major improvement over previous devices of this type is in the elimination of oxygen contamination during laser recrystallization. This resulted in a reduction in the dark excess junction current and improvement in minority carrier diffusion length. The devices are found to be diffusion limited, with diffusion current coefficients in the range of 3 × 10-12to 5 × 10-12A/cm2when the base resistivity was 0.4 to 0.5 Ω-cm p-type.
Keywords
Grain size; Laser modes; Particle beams; Photovoltaic cells; Plasma applications; Plasma temperature; Raw materials; Semiconductor films; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25302
Filename
1481164
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