Title :
High-efficiency stripe-geometry InGaAsP DH lasers (λ = 1.3 µm) with chemically-etched mirrors
Author :
Wright, P.D. ; Nelson, R.J.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
fDate :
11/1/1980 12:00:00 AM
Abstract :
Stripe-geometry InGaAsP double heterojunction lasers with chemically-etched mirrors have been fabricated. External differential quantum efficiencies as high as ∼ 30% have been obtained for devices with two chemically-etched mirrors. Etched-mirror lasers with 25 µm wide stripes have threshold currents as low as 210mA (room-temperature, pulsed). The etched-mirror lasers are compared to cleaved-mirror devices prepared from the same wafer.
Keywords :
Chemical lasers; DH-HEMTs; Etching; Heterojunctions; Laser modes; Lasers and electrooptics; Mirrors; Optical device fabrication; Scanning electron microscopy; Threshold current;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25303
