Title :
Sensitive GaAlAs/GaAs wide-gap emitter phototransistor for high current applications
Author :
Svilans, M.N. ; Grote, N. ; Beneking, H.
Author_Institution :
Aachen Technical University, Aachen, FRG
fDate :
12/1/1980 12:00:00 AM
Abstract :
GaAlAs/GaAs bipolar phototransistors involving a wide gap emitter have been fabricated which exhibit high current gain with corresponding external quantum efficiencies of the order of 5000. The devices provide a power switching capability of more than 1 W.
Keywords :
Bipolar transistors; Contacts; Doping; Etching; Gallium arsenide; Heterojunctions; Lighting; Optical sensors; Phototransistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25308
