Title :
A novel buried grid device fabrication technology
Author :
Baliga, B.Jayant
Author_Institution :
General electric Company, Schenectady, N.Y
fDate :
12/1/1980 12:00:00 AM
Abstract :
A new buried grid fabrication technology based upon preferential etching and planar epitaxial refill techniques is described. This technology produces buried grids with a rectangular cross-section. The resulting improvement in the aspect ratio of the channel between the grids allows the fabrication of large area, high voltage, vertical channel field effect transistors and field controlled thyristors with very high blocking gains.
Keywords :
Boron; Doping; Epitaxial growth; Etching; Fabrication; Hydrogen; Shape control; Silicon; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25309
