DocumentCode
1072902
Title
A novel buried grid device fabrication technology
Author
Baliga, B.Jayant
Author_Institution
General electric Company, Schenectady, N.Y
Volume
1
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
250
Lastpage
252
Abstract
A new buried grid fabrication technology based upon preferential etching and planar epitaxial refill techniques is described. This technology produces buried grids with a rectangular cross-section. The resulting improvement in the aspect ratio of the channel between the grids allows the fabrication of large area, high voltage, vertical channel field effect transistors and field controlled thyristors with very high blocking gains.
Keywords
Boron; Doping; Epitaxial growth; Etching; Fabrication; Hydrogen; Shape control; Silicon; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25309
Filename
1481171
Link To Document