Title :
On the scaling of Si-MESFETs
Author :
Ram, G.V. ; Elmasry, M.I.
Author_Institution :
University of Waterloo, Waterloo, Ontario, Canada
fDate :
12/1/1980 12:00:00 AM
Abstract :
This letter discusses some options in scaling Si-MESFETs and compares them to the scaling of MOSFETs with the aid of a scaling table based on first order device equations.
Keywords :
Capacitance; Charge coupled devices; Diodes; Equations; Intrusion detection; MESFETs; MOSFETs; Space charge; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25312
