DocumentCode
1073063
Title
Simulation of light versus current characteristic of an injection laser using an optoisolator
Author
Moy, G.
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
14
Issue
11
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
865
Lastpage
867
Abstract
A simple circuit which models the light-versus-current ( 
) transfer characteristic of a semiconductor injection laser is described. It is suitable for use in developing circuits for lightwave transmitters so that damage to the laser from transients can be avoided. Features include adjustment in lasing threshold, and differential quantum efficiency. Also a nonlinearity (kink) can be placed in the simulated characteristic, emulating a feature often seen in actual lasers.
) transfer characteristic of a semiconductor injection laser is described. It is suitable for use in developing circuits for lightwave transmitters so that damage to the laser from transients can be avoided. Features include adjustment in lasing threshold, and differential quantum efficiency. Also a nonlinearity (kink) can be placed in the simulated characteristic, emulating a feature often seen in actual lasers.Keywords
Circuit simulation; Circuit testing; Laser modes; Light emitting diodes; Light sources; Optical control; Semiconductor lasers; Threshold current; Threshold voltage; Transmitters;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1978.1069704
Filename
1069704
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