DocumentCode :
1073063
Title :
Simulation of light versus current characteristic of an injection laser using an optoisolator
Author :
Moy, G.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Volume :
14
Issue :
11
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
865
Lastpage :
867
Abstract :
A simple circuit which models the light-versus-current ( 
) transfer characteristic of a semiconductor injection laser is described. It is suitable for use in developing circuits for lightwave transmitters so that damage to the laser from transients can be avoided. Features include adjustment in lasing threshold, and differential quantum efficiency. Also a nonlinearity (kink) can be placed in the simulated characteristic, emulating a feature often seen in actual lasers.
) transfer characteristic of a semiconductor injection laser is described. It is suitable for use in developing circuits for lightwave transmitters so that damage to the laser from transients can be avoided. Features include adjustment in lasing threshold, and differential quantum efficiency. Also a nonlinearity (kink) can be placed in the simulated characteristic, emulating a feature often seen in actual lasers.Keywords :
Circuit simulation; Circuit testing; Laser modes; Light emitting diodes; Light sources; Optical control; Semiconductor lasers; Threshold current; Threshold voltage; Transmitters;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1978.1069704
Filename :
1069704
Link To Document :
