Title :
Modeling the impurity profile in an ion-implanted layer of an IGFET for the calculation of threshold voltages
Author :
Dang, Luong Mo ; Iwai, Hiroshi
Author_Institution :
Toshiba Corporation, Saiwai-ku, Kawasaki-shi, Japan
fDate :
1/1/1981 12:00:00 AM
Abstract :
An extremely simple model for the impurity profile in an ion-implanted channel layer of an IGFET is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel silicon devices.
Keywords :
Conductivity; Conductors; Dielectric substrates; Fabrication; Impurities; Laboratories; Niobium; Shape; Silicon devices; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20291
