Title :
Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation
Author :
Yamaguchi, Ken ; Takahashi, Susumu ; Kodera, Hiroshi
Author_Institution :
Hitachi Ltd., Kokubunji-shi, Tokyo, Japan
fDate :
1/1/1981 12:00:00 AM
Abstract :
A new device structure is proposed for Si MOSFET, featuring an insulated gate structure, channel doping, and finite spacing between gate and source and between gate and drain. Two-dimensional numerical analysis shows that punchthrough is suppressed and that minimum gate length, limited bypunchthrough or VTshift, is extended into the submicrometer range.
Keywords :
Charge carrier density; Computer simulation; Doping; Gallium arsenide; Insulation; MESFETs; MOSFET circuits; Numerical analysis; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20292
