Title :
High-performance quasi-optical GaAs monolithic mixer at 110 GHz
Author :
Clifton, Brian J. ; Alley, Gary D. ; Murphy, R. Allen ; Mroczkowski, Isabel H.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
2/1/1981 12:00:00 AM
Abstract :
A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.
Keywords :
Capacitors; Coupling circuits; Gallium arsenide; Metallization; Millimeter wave integrated circuits; Monolithic integrated circuits; Radio frequency; Schottky diodes; Surface impedance; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20302
