Title :
Performance of monolithic GaAs FET oscillators at J-band
Author :
Tserng, Hua Quen ; Macksey, H. Michael
Author_Institution :
Texas Instruments, Inc., Dallas, TX
fDate :
2/1/1981 12:00:00 AM
Abstract :
Monolithic GaAs FET oscillators were demonstrated at J-band frequencies. Output power up to 160 mW with 23-percent efficiency at 12 GHz was achieved. With a discrete tuning varactor, a 300-µm gate-width FET monolithic oscillator was tuned from 16 to 20 GHz. The average output power was l0 mW.
Keywords :
Circuit optimization; FETs; Feedback circuits; Frequency; Gallium arsenide; Impedance; Power generation; Tuning; Varactors; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20304
