Title :
Monolithic dual-gate GaAs FET amplifier
Author :
Kumar, Mahesh ; Taylor, Gordon C. ; Huang, Ho-Chung
Author_Institution :
RCA Laboratories, Princeton, NJ
fDate :
2/1/1981 12:00:00 AM
Abstract :
This paper presents the design, fabrication, and performance of a broad-band monolithic dual-gate GaAs FET amplifier. The amplifier has a gain of 3.5-5 dB over the 4.5- to 8-GHz band.
Keywords :
Chemicals; Etching; Fabrication; Gain; Gallium arsenide; Gold; Integrated circuit noise; Microwave FETs; Resists; Sensitivity analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20310
