DocumentCode :
1073376
Title :
A saturated PA with high efficiency [Technical Committee]
Author :
Kim, Jung-Ho ; Moon, Jinyeong ; Kim, Bumki ; Pengelly, Raymond S.
Author_Institution :
POSTECH, Pohang, Republic of Korea
Volume :
10
Issue :
1
fYear :
2009
fDate :
2/1/2009 12:00:00 AM
Firstpage :
126
Lastpage :
133
Abstract :
The IEEE MTT-5 student design competition for high-efficiency PAs provides the opportunity for the student to do an in-depth study of a PA from theoretical concept and analysis to fabrication and testing. This competition motivates many students to have a strong interest in a highly efficient PA design and development. The contest rules require the PA to operate at a frequency greater than 1 GHz but less than 20 GHz and produce an output power of greater than 5 W but less than 100 W into a 50 Ω load with a power input of less than 25 dBm. Aparticipant demonstrates the PA at the International Microwave Symposium (IMS), and the designer of the PA with the highest power-added efficiency (PAE) becomes the winning entry of the contest. The PAs designed by previous winners showed PAE with >75% at about 1 GHz frequency range [1]¿[3]. In the 2008 contest, a new rule, which has a frequency weighting factor of the PAE multiplied by (GHz)0.25, was introduced to encourage PA design at higher frequencies.
Keywords :
Consumer electronics; Engineering students; Gallium nitride; HEMTs; High power amplifiers; Impedance; Microwave amplifiers; Microwave technology; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2009.931538
Filename :
4754014
Link To Document :
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