Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p⁺and n⁺contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) [1]-[10] similar to silicon-controlled rectifiers. With the added influence of a p⁺gate appropriately placed between the anode (p⁺) and cathode (n⁺), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type D1 diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.