DocumentCode
1073517
Title
Transverse mode stabilized Alx Ga1-x As injection lasers with channeled-substrate-planar structure
Author
Aiki, K. ; Nakamura, M. ; Kuroda, Takao ; Umeda, J. ; Ito, R. ; Chinone, Naoki ; Maeda, M.
Author_Institution
Hitachi, Ltd., Tokyo, Japan
Volume
14
Issue
2
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
89
Lastpage
94
Abstract
A built-in passive waveguide mechanism is introduced in Alx Ga1-x As injection lasers by growing planar double heterostructure (DH) layers on a grooved GaAs substrate. The lasing mode is confined to the channel region due to excess absorption loss outside the channel. Stable fundamental mode oscillation is achieved up to twice the threshold current for a channel width of 
. Undesirable lasing behavior usually induced by transverse mode instability, such as nonlinear kinks in the light output versus current characteristics, are significantly reduced in the present lasers. The dc threshold current is 40-90 mA at room temperature. Median lifetime of 780 hours has been obtained during preliminary aging tests at a heat sink temperature of 70°C.
. Undesirable lasing behavior usually induced by transverse mode instability, such as nonlinear kinks in the light output versus current characteristics, are significantly reduced in the present lasers. The dc threshold current is 40-90 mA at room temperature. Median lifetime of 780 hours has been obtained during preliminary aging tests at a heat sink temperature of 70°C.Keywords
Absorption; Aging; DH-HEMTs; Gallium arsenide; Laser modes; Life testing; Planar waveguides; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1978.1069748
Filename
1069748
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