The Faraday effect in dilute magnetic semiconductors in ultrahigh magnetic field

Author

Nikitin, Petr I. ; Tatzenko, Olga M. ; Platonov, Vadim V. ; Savchuk, Andriy I. ; Nikitin, Sergei I.

Author_Institution

General Phys. Inst., Moscow, Russia

Volume

29

Issue

6

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

3422

Lastpage

3424

Abstract

Ultrahigh magnetic fields of up to 500 T have been used for investigations of the Faraday effect in the dilute magnetic semiconductor Cd_1-xMn_xTe. Measurements have been carried out using samples of the content x=0.43 at wavelengths 0.63 and 1.06 μm at room temperature. Magnetic field dependence of the Faraday rotation is linear at both wavelengths up to 100 T. At higher fields there is a saturation in this dependence which has been interpreted as arising from a change of magnetization in the ensemble of Mn²⁺ ions. It is shown that it is necessary to consider the interband exchange interaction and the direct influence of the external magnetic field on the carrier spins for correct interpretation of the experimental results

Keywords

Faraday effect; cadmium compounds; exchange interactions (electron); manganese compounds; semimagnetic semiconductors; 0.63 micron; 1.06 micron; 500 T; Cd_1-xMn_xTe; Faraday effect; II-VI semiconductors; carrier spins; dilute magnetic semiconductors; external magnetic field; interband exchange interaction; single crystals; ultrahigh magnetic field; Crystals; Faraday effect; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetic materials; Magnetic semiconductors; Physics; Rotation measurement; Temperature dependence;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.281183

Filename

281183