Title :
Electrodeposited Biaxially Textured Buffer Layers for YBCO Superconductors
Author :
Bhattacharya, Rupen ; Phok, S. ; Yongli Xu ; Bhattacharya, Rupen
Author_Institution :
Nat. Renewable Energy Lab., Golden
fDate :
6/1/2007 12:00:00 AM
Abstract :
Nonvacuum electrodeposition (ED) was used to prepare a biaxially textured Gd2Zr2O7 (GZO) buffer layer on a Ni-W substrates. The GZO buffer layer was capped with a pulsed laser deposited (PLD) CeO2 layer. The YBa2Cu3O7-delta (YBCO) superconductor was deposited by metallorganic deposition (MOD) on a simplified ED-GZO/PLD-CeO2 buffer layer. The buffer layers and YBCO superconductor were characterized by X-ray diffraction (including thetas/2thetas, pole figure, omega scans, and phi scans), and atomic force microscopy (AFM). Full-width at half maximum values of the omega (omega) and phi (Phi) scans of the electrodeposited GZO layer were better than those of the Ni-W base substrate. At 77 K and a self-magnetic field, the critical current density of MOD YBCO on the electrodeposited-based buffer layer was 1.31 x 106 A/cm2 , using the field criterion of 1 muV/cm.
Keywords :
MOCVD; X-ray diffraction; atomic force microscopy; barium compounds; buffer layers; cerium compounds; critical current density (superconductivity); electrodeposition; electrodeposits; gadolinium compounds; high-temperature superconductors; superconducting tapes; superconducting thin films; yttrium compounds; Gd2Zr2O7-CeO2; Ni-W; X-ray diffraction; YBa2Cu3O7; atomic force microscopy; biaxially textured buffer layer; critical current density; metallorganic deposition; nonvacuum electrodeposition; superconductors; tapes; temperature 77 K; Atomic force microscopy; Atomic layer deposition; Buffer layers; High temperature superconductors; Optical pulses; Pulsed laser deposition; Superconductivity; X-ray diffraction; Yttrium barium copper oxide; Zirconium; Buffers; electrochemical process; superconducting tapes; yttrium compounds;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2007.898936