DocumentCode :
1073577
Title :
In1-x Gax Asy P1-y /InP DH lasers fabricated on InP
Author :
Yamamoto, Takaya ; Sakai, Kazuo ; Akiba, Shigeyuki ; Suematsu, Yasuharu ; Suematsu, Yasuharu
Author_Institution :
KDD Research and Development Laboratories, Tokyo, Japan
Volume :
14
Issue :
2
fYear :
1978
fDate :
2/1/1978 12:00:00 AM
Firstpage :
95
Lastpage :
98
Abstract :
In1-x Gax Asy P1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 
m at room temperature were fabricated on
m at room temperature were fabricated onKeywords :
DH-HEMTs; Diode lasers; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Substrates; Surface emitting lasers; Temperature dependence; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1978.1069753
Filename :
1069753
Link To Document :
