DocumentCode :
1073584
Title :
A new method for the two-dimensional calculation of the potential distribution in a buried-channel charge-coupled device: Theory and experimental verification
Author :
De Meyer, Kristin M. ; Declerck, Gilbert J.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
28
Issue :
3
fYear :
1981
fDate :
3/1/1981 12:00:00 AM
Firstpage :
313
Lastpage :
321
Abstract :
This paper describes a new method for calculating the potential distribution in the depleted top layer and in the substrate of a buried-channel charge-coupled (BCCD) device. The depletion approximation is used. The experimental verification of the method is done by comparing the results with measured values for the maximum channel potential ΦMAX , the location Ym of that maximum, and the location 
of the edge of the p-n depletion layer into the substrate.
of the edge of the p-n depletion layer into the substrate.Keywords :
Boundary conditions; Charge coupled devices; Dielectric substrates; Differential equations; Doping profiles; Finite difference methods; Insulation; Poisson equations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20334
Filename :
1481486
Link To Document :
