• DocumentCode
    1073584
  • Title

    A new method for the two-dimensional calculation of the potential distribution in a buried-channel charge-coupled device: Theory and experimental verification

  • Author

    De Meyer, Kristin M. ; Declerck, Gilbert J.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    28
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    313
  • Lastpage
    321
  • Abstract
    This paper describes a new method for calculating the potential distribution in the depleted top layer and in the substrate of a buried-channel charge-coupled (BCCD) device. The depletion approximation is used. The experimental verification of the method is done by comparing the results with measured values for the maximum channel potential ΦMAX, the location Ymof that maximum, and the location H of the edge of the p-n depletion layer into the substrate.
  • Keywords
    Boundary conditions; Charge coupled devices; Dielectric substrates; Differential equations; Doping profiles; Finite difference methods; Insulation; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20334
  • Filename
    1481486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073584