Title :
Silicon-compatible integrable infrared-light sources
Author :
Walsh, P.J. ; Thompson, M.J. ; Pooladej, J.
Author_Institution :
Fairleigh Dickinson University, Teaneck, NJ
fDate :
3/1/1981 12:00:00 AM
Abstract :
Novel silicon-compatible integrable infrared-light emitters are discussed. Emission occurs above a threshold current in the conducting state of glassy chalcogenide thin films at an energy near half bandgap. The emission may occur in a very wide range of glassy materials.
Keywords :
Conducting materials; Displays; Geometry; Glass; Insulation; Photonic band gap; Silicon; Sputtering; Threshold current; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20338
