Title :
Electromigration in sputtered aluminum films
Author :
Schreiber, H.U. ; Grabe, B.
Author_Institution :
Ruhr-Universität Bochum, Bochum, Germany
fDate :
3/1/1981 12:00:00 AM
Abstract :
The electromigration behavior of sputtered aluminum films is discussed. Direct measurement of the aluminum drift velocity yielded a grain boundary activation energy of about 0.43 to 0.46 eV in the temperature range between 140 and 280°C. Time to failure and reliability were also tested and compared with electron-beam-evaporated aluminum, indicating a good quality for the sputtered films if sputter conditions are properly chosen.
Keywords :
Aluminum; Argon; Electromigration; Integrated circuit metallization; Integrated circuit reliability; Rough surfaces; Sputtering; Substrates; Surface roughness; Titanium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20342
