DocumentCode :
1073685
Title :
Characteristics of integrated MOM junctions at DC and at optical frequencies
Author :
Heiblum, Mordehai ; Wang, Shihyuan ; Whinnery, John R. ; Gustafson, T. Kenneth
Author_Institution :
University of California, Berkeley, CA, USA
Volume :
14
Issue :
3
fYear :
1978
fDate :
3/1/1978 12:00:00 AM
Firstpage :
159
Lastpage :
169
Abstract :
We present a new metal-oxide-metal device (Ni-NiO-Ni, "Edge MOM") which is stable, reproducibly fabricated, and with a 10-10-cm2tunneling area. Performing detection experiments, the device\´s nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 μm. Similar devices with 10-8-cm2tunneling areas perform as well as the Edge MOM\´s in the visible and the near-infrared range, but deteriorate in performance at the 10-μm range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.
Keywords :
Detectors; Frequency; Integrated optics; Message-oriented middleware; Nonlinear optical devices; Nonlinear optics; Optical amplifiers; Oscillators; Temperature; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1978.1069765
Filename :
1069765
Link To Document :
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