Accurate determination of temperature rise in Burrus-type LED´s by using resonant reflection spectra

At the high injection operation of double-heterostructure (DH) light emitting diodes (LED´s), such specific phenomena as temperature rise, band filling, carrier overflow, and ambipolar diffusion affect the device performance. We present an accurate method of mea, suring temperature rise in Burrus-type LED´s by using resonant reflection spectra. This method is superior, especially for the high injection region, to the conventional emission-spectrum method and junction-voltage method due to its band filling-free and injection-free properties. An accuracy of ±0.8 K has been obtained, which is four times better than that of the emission-spectrum method in the case of Burrus-type LED´s. This improvement is accomplished by using the resonant spectra in an absorption-free infrared spectral region. Thermal properties including dynamic behavior can be characterized quantitatively by deriving the thermal resistance and the thermal time constant of the device.