DocumentCode :
1073765
Title :
Hopping-Type Electronic Processes in Pre-Breakdown Electrical Fields in Insulators with Defect Centers
Author :
Berezin, A.A.
Author_Institution :
Department of Engineering Physics McMaster University, Hamilton, Ontario Canada
Issue :
3
fYear :
1984
fDate :
6/1/1984 12:00:00 AM
Firstpage :
183
Lastpage :
186
Abstract :
Field-induced electronic jumps over the system of impurity centers in ionic insulators in pre-breakdown electric fields are discussed. An alkali halide crystal with electrically neutral F-color centers and negatively charged F´-centers is used as a model system. The Radiative Tunnel Transitions (RTT) of an outer electrons of F´-centers over the network of F-sites under the action of an applied electric field, could provide a specific contribution to the total electronic conductivity. This mechanism has similarities with activationless hopping conductivity in strong electric fields in compensated semiconductors. The processes of inter-electronic energy transfer could provide yet another contributing factor towards the enhancement of the pre-breakdown electronic conductivity.
Keywords :
Conducting materials; Conductivity; Dielectrics and electrical insulation; Electric breakdown; Electron traps; Energy exchange; Impurities; Optical polarization; Physics; Tunneling;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/TEI.1984.298743
Filename :
4081226
Link To Document :
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