Title :
Monolithic GaAlAs/GaAs infrared-to-visible wavelength converter with optical power amplification
Author :
Beneking, Heinz ; Grote, Norbert ; Svilans, Mikelis N.
Author_Institution :
Aachen Technical University, Aachen, Federal Republic of Germany
fDate :
4/1/1981 12:00:00 AM
Abstract :
A monolithic wavelength converter has been constructed in the GaAlAs alloy system which comprises a wide gap emitter phototransistor and a double heterojunction (DH) light emitting diode (LED) in a bifacial configuration. The liquid phase epitaxy (LPE)-grown structure is capable of efficiently converting IR light with λ < 870 nm into the red spectral range in conjunction with optical power amplification.
Keywords :
Electrons; Gallium arsenide; Heterojunctions; Light emitting diodes; Optical modulation; Optical wavelength conversion; Phototransistors; Semiconductor diodes; Solid state circuits; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20354
