DocumentCode :
1073798
Title :
Reduction of leakage current of large-area high-resistivity silicon p-i-n photodiodes for detection at 1.06 µm
Author :
Lee, Joseph Ya-Min
Author_Institution :
Hughes Aircraft Company, Carlsbad, CA
Volume :
28
Issue :
4
fYear :
1981
fDate :
4/1/1981 12:00:00 AM
Firstpage :
412
Lastpage :
416
Abstract :
An experimental study has been carried out to reduce the leakage current of large-area (>2.5 cm2) high-resistivity (p-type, 8000 to 15 000 Ω . cm) fully depleted silicon p-i-n photodiodes. A new process technology, using low temperature oxidation and utilizing complete implantation doping, has been successfully developed. This process reproducibly gives photodiodes with generation-limited leakage current. The lowest level of leakage current achieved is in the order of 1 µA/cm3per unit depletion volume at 200-V reverse bias.
Keywords :
Aircraft; Conductivity; Infrared detectors; Leak detection; Leakage current; P-n junctions; PIN photodiodes; Radiation detectors; Silicon radiation detectors; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20356
Filename :
1481508
Link To Document :
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