• DocumentCode
    1073836
  • Title

    Blue electroluminescence in forward-biased ZnSe diodes

  • Author

    Fan, X.W. ; Woods, John

  • Author_Institution
    University of Durham, Durham, England
  • Volume
    28
  • Issue
    4
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    428
  • Lastpage
    433
  • Abstract
    The electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystal ZnSe has been studied over the temperature range 20-290 K. At room temperature the emission consisted of two intense bands in the blue at 4655 and 4770 Å, while at the lowest temperatures much more structure was observed. Thus at 20 K free and bound exciton emission was particularly intense, and the donor-acceptor (DA) pair band emission (the Q series), together with its accompanying free-to-bound series was also prominent. The bound exciton, pair band, and free-to-bound emission were all substantially quenched as the temperature was increased, so that at room temperature the two blue bands were the only remaining components of the luminescence. Evidence is produced to demonstrate that the band at 4655 Å is associated with free exciton recombination following scattering from free electrons in the conduction band. The band at 4770 Å is attributed to free exciton recombination with the emission of two longitudinal optical (LO) phonons.
  • Keywords
    Diodes; Electroluminescence; Electron optics; Excitons; Luminescence; Optical scattering; Spontaneous emission; Stimulated emission; Temperature distribution; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20360
  • Filename
    1481512