Domain wall pinning and hysteresis losses in amorphous CoNbZr films

Author

Rouabhi, M. ; Guyot, M. ; Cagan, V. ; Krishnan, R.

Author_Institution

Lab. de Magnetisme et Materiaux Magnetiques, CNRS, Meudon, France

Volume

29

Issue

6

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

3502

Lastpage

3504

Abstract

In a series of CoNbZr amorphous films prepared by RF sputtering, with thickness t ranging from 86 to 480 nm, the authors show that the domain wall (DW) motion is the dominant magnetization mechanism in the irreversible processes when the magnetic field is applied along the in-plane easy axis. A simple model, assuming a DW pinning at the film surfaces, explains the existence of a critical unpinning field (as well as hysteresis losses) inversely proportional to the film thickness. Frequency effects in loop parameters are reported up to 100 kHz

Keywords

cobalt alloys; ferromagnetic properties of substances; magnetic domain walls; magnetic hysteresis; magnetic leakage; magnetic properties of amorphous substances; magnetic thin films; niobium alloys; sputtered coatings; zirconium alloys; 86 to 480 nm; CoNbZr amorphous films; critical unpinning field; domain wall motion; domain wall pinning; dominant magnetization mechanism; film surfaces; film thickness; hysteresis losses; in-plane easy axis; irreversible processes; loop parameters; magnetic field; radiofrequency sputtering; simple model; Amorphous magnetic materials; Amorphous materials; Frequency measurement; Loss measurement; Magnetic field measurement; Magnetic films; Magnetic hysteresis; Permeability; Saturation magnetization; Thickness measurement;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.281210

Filename

281210