• DocumentCode
    1073972
  • Title

    Modeling of low-pressure chemical vapor deposition

  • Author

    Charlier, Jean-Paul

  • Author_Institution
    Philips Research Laboratory, Brussels, Belgium
  • Volume
    28
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    501
  • Lastpage
    504
  • Abstract
    A simple mathematical model is established for low-pressure chemical vapor deposition (LPCVD) reactors which takes into account the interaction between diffusion and convection. The classical method of separation of variables can be applied to solve the partial differential equations describing the process, in view of the fact that in practice the deposition rate is small.
  • Keywords
    Chemical reactors; Chemical technology; Chemical vapor deposition; Dielectrics; Fluid flow; Inductors; Laplace equations; Large-scale systems; Mathematical model; Partial differential equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20373
  • Filename
    1481525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073972