DocumentCode :
1073981
Title :
Characteristics of planar doped FET structures
Author :
Board, Kenneth ; Chandra, Amitabh ; Wood, Colin E.C. ; Judaprawira, Seno ; Eastman, Lester F.
Author_Institution :
University of Wales, Swansea, UK
Volume :
28
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
505
Lastpage :
510
Abstract :
The recent demonstration of single atomic planes of doping using molecular beam epitaxy gives rise to the possibility of single plane FET´s with the channel confined to the dopant plane. In this paper an analysis of the Structure is presented which takes account of the spread of the free-carrier density normal to the plane. This rigorous analysis is compared with the simple case of a plane of free carriers. Under certain conditions the simple model gives good agreement with the exact analysis but for shallow, low-density planes, substantial departures from the simple model occur.
Keywords :
Atomic beams; Atomic layer deposition; Capacitance; Doping profiles; Electrons; FETs; Gallium arsenide; Molecular beam epitaxial growth; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20374
Filename :
1481526
Link To Document :
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